? semiconductor components industries, llc, 2015 july, 2015 ? rev. 1 1 publication order number: ntst40h120ect/d NTST40H120ECTG very low leakage trench-based schottky rectifier features ? fine lithography t rench?based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? these are pb?free devices typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc?dc converters ? freewheeling and or?ing diodes ? reverse battery protection ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets flammability rating ul 94?0 @ 0.125 in ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c maximum for 10 sec to?220ab case 221a style 6 3 4 1 very low leakage, schottky barrier rectifiers 40 amperes, 120 volts 1 3 2, 4 2 www. onsemi.com see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information pin connections marking diagram a = assembly location y = year ww = work week aka = polarity designator g = pb?free package ayww ts40h120eg aka to?220ab
NTST40H120ECTG www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 120 v average rectified forward current (rated v r , t c = 124 c) per device (rated v r , t c = 134 c) per diode i f(av) 40 20 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 120 c) per device (rated v r , square wave, 20 khz, t c = 130 c) per diode i frm 80 40 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 250 a operating junction temperature t j ?40 to +150 c storage temperature t stg ?40 to +150 c voltage rate of change (rated v r ) dv/dt 36 v/ns stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics rating symbol NTST40H120ECTG unit maximum thermal resistance per device junction?to?case junction?to?ambient r jc r ja 0.81 70 c/w c/w electrical characteristics (per leg unless otherwise noted) rating symbol typ max unit maximum instantaneous forward voltage (note 1) (i f = 5 a, t j = 25 c) (i f = 10 a, t j = 25 c) (i f = 20 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 10 a, t j = 125 c) (i f = 20 a, t j = 125 c) v f 0.54 0.67 0.84 0.47 0.56 0.66 ? ? 0.93 ? ? 0.7 v maximum instantaneous reverse current (note 1) (v r = 90 v, t j = 25 c) (v r = 90 v, t j = 125 c) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 3 5 ? 7 ? ? 25 28 a ma a ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width = 300 s, duty cycle 2.0%
NTST40H120ECTG www. onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. maximum instantaneous forward characteristics v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1 10 100 1.2 1.0 0.8 1.4 0.6 0.4 0.2 0 0.1 1 10 100 figure 3. typical reverse characteristics figure 4. maximum reverse characteristics v r , instantaneous reverse voltage (v) 100 90 80 60 50 40 20 10 1.e?06 figure 5. typical junction capacitance figure 6. current derating per diode v r , reverse voltage (v) t c , case temperature ( c) 100 10 1 0.1 100 1000 10,000 150 110 90 30 10 0 0 5 10 15 20 25 30 35 i f , instantaneous forward current (a) i r , instantaneous reverse current (a) c, junction capacitance (pf) i f(av) , average forward current (a) i f , instantaneous forward current (a) t a = 175 c t a = 150 c t a = ?40 c t a = 25 c 30 70 110 120 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 t a = 150 c t a = 125 c t a = 25 c 100 90 80 60 50 40 20 10 i r , instantaneous reverse current (a) 30 70 110 120 1.e?06 1.e?04 1.e?03 1.e?02 1.e?01 t a = 150 c t a = 125 c t a = 25 c v r , instantaneous reverse voltage (v) t j = 25 c 50 70 130 square wave dc r jc = 1.3 c/w t a = 125 c t a = 175 c t a = 150 c t a = ?40 c t a = 25 c t a = 125 c t a = 175 c t a = 175 c 1.e?05
NTST40H120ECTG www. onsemi.com 4 typical characteristics figure 7. current derating per device figure 8. forward power dissipation i f(av) , average forward current (a) 22 16 14 12 6 4 2 0 0 2 4 8 10 12 16 18 figure 9. thermal characteristics t, pulse time (s) 1000 100 0.01 0.001 0.0001 0.00001 0.000001 0.001 0.01 0.1 1 10 100 p f(av) , average forward power dissipation (w) r(t) ( c/w) t c , case temperature ( c) 150 110 90 30 10 0 0 10 20 30 40 50 60 70 i f(av) , average forward current (a) 50 70 130 square wave dc r jc = 0.81 c/w 810 1820 24 6 14 square wave dc i pk /i av = 10 i pk /i av = 5 i pk /i av = 20 10 1 0.1 50% duty cycle single pulse 20% 10% 5% 2% 1% junction?to?ambient, pcb area 100 mm 2 , pcb thk 1 oz, die area 19.52 mm 2 , active area 41.7% ordering information device package shipping NTST40H120ECTG to?220ab (pb?free) 50 units / rail
NTST40H120ECTG www. onsemi.com 5 package dimensions to?220 case 221a?09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntst40h120ect/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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